Improved efficiency of ultra-thin Вµc-Si solar cells with photonic-crystal structures. Future prospects of silicon photonics in next generation communication and computing systems. Mode-based analysis of silicon nanohole arrays for photovoltaic applications. Optical absorption enhancement in silicon nanohole arrays for solar photovoltaics. Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. Slow light in photonic crystal waveguides. Absorption enhancement using photonic crystals for silicon thin film solar cells. Intensity enhancement in textured optical sheets for solar-cells. Light trapping in silicon nanowire solar cells. Efficient light trapping in inverted nanopyramid thin crystalline silicon membranes for solar cell applications. Achieving an accurate surface profile of a photonic crystal for near-unity solar absorption in a super thin-film architecture. The future of silicon photonics: not so fast? Insights from 100G ethernet LAN transceivers.

Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. Proceedings of 2015 Optical Fiber Communications Conference and Exhibition (OFC), paper MB3.B (OSA, 2015).Д¬hen, L., Dong, P. Reliability and non-hermetic properties of Ge/Si optoelectronic devices.

Proceedings of 58th Electronic Components and Technology Conference 238вЂ“243 (IEEE, 2008). 300-Gb/s 24-channel bidirectional Si carrier transceiver optochip for board-level interconnects. Silicene field-effect transistors operating at room temperature. Graphene photodetectors for high-speed optical communications. Near-unity photoluminescence quantum yield in MoS2. Fabrication of high-speed resonant cavity enhanced Schottky photodiodes. High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates. in Experimental Aspects of Quantum Computing 215вЂ“231 (Springer, 2005).Д®msley, M. Avalanche double photodiode in 40-nm standard CMOS technology. Integrated silicon optical receiver with avalanche photodiode. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gainвЂ“bandwidth product. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. A high-speed and high-responsivity photodiode in standard CMOS technology.

Si nano-photodiode with a surface plasmon antenna. Ishi, T., Fujikata, J., Makita, K., Baba, T. Fully embedded board-level guided-wave optoelectronic interconnects. Handbook of Optical Constants of Solids (Academic, 1985).Д¬hen, R. VCSEL-based interconnects for current and future data centers. Proceedings of 2016 Optical Fiber Communications Conference and Exhibition (OFC), paper Th4H.1 (OSA, 2016). Single-chip microprocessor that communicates directly using light. Further optimization can improve the efficiency to more than 70%. The photodiode uses micro- and nanostructured holes to enhance, by an order of magnitude, the absorption efficiency of a thin intrinsic layer of less than 2вЂ…Вµm thickness and is designed for a data rate of 20вЂ…gigabits per second or higher at a wavelength of 850вЂ…nm. We report the first demonstration of micro- and nanoscale holes enabling light trapping in a silicon photodiode, which exhibits an ultrafast impulse response (full-width at half-maximum) of 30вЂ…ps and a high efficiency of more than 50%, for use in data-centre optical communications. Monolithic integration of optical components with signal-processing electronics on a single silicon chip is of paramount importance in the drive to reduce cost and improve performance. High-speed, high-efficiency photodetectors play an important role in optical communication links that are increasingly being used in data centres to handle higher volumes of data traffic and higher bandwidths, as big data and cloud computing continue to grow exponentially.

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